solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering informatio n 1 / sft2222a2 _ _ _ _ 2 / _ _ = commercial tx= tx level txv= txv level s= s level g w = gullwing sft2222a2 series dual microminiature package 800 ma 75 volts dual npn transistor features: ? high speed switching transistor ? multiple devices reduce board space ? high power dissipation: up to 660 mw ? replacement for 2n2222au ? tx, txv, s-level screening available 2 / ? npn complimentary parts available (sft2907a2) maximum ratings symbol value units collector ? emitter voltage v ceo 50 volts collector ? base voltage v cbo 75 volts emitter ? base voltage v ebo 6 volts continuous collector current i c 800 ma power dissipation @ t a = 25oc per device total p d 500 660 mw operating & storage temperature t op & t stg -65 to +200 oc maximum thermal resistance (junction to pcb) r j-pcb 265 oc/w gullwin g (gw) tolerances: .xx .01 .xxx .005 pin 1 pin 4 pin 6 pin 3 pin 1 pin 4 pin 6 pin 3 ssdi .193 .015.010 .040 .010 .350 .010 6x r.010 .033 3x .015 .010 .107 .130 2x .050 (=.100) 6x .030 .107 .034 .125 6x .010 .025 5x r.018 .015 .035 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0030e doc
solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sft2222a2 series electrical characteristic 4 / symbol min max units collector ? emitter sustaining voltage i c = 10 ma bv ceo 50 ?? volts collector cutoff current v ce = 50 v i ces ?? 50 na collector cutoff current v cb =60 v v cb = 75 v v cb = 60 v, t a = 150oc i cbo ?? 0.01 10 10 a emitter cutoff current v eb = 4.0 v v eb = 6.0 v i ebo ?? 0.01 10 a dc forward current transfer ratio 5 / v ce =10v, i c =0.1 ma v ce = 10 v, i c = 1.0 ma v ce = 10 v, i c = 10 ma v ce = 10 v, i c = 150 ma v ce = 10 v, i c = 500 ma v ce = 10 v, i c = 10 ma, t a = -55oc h fe 50 75 100 100 30 35 ?? 325 ? 300 ?? ?? small-si g nal forward current transfer ratio v ce = 10 v, i c = 1.0 ma, f= 1 khz h fe 50 ? collector ? emitter saturation voltage 5 / i c =150ma, i b =15ma i c = 500 ma, i b = 50 ma v ce(sat) ?? ?? 0.3 1.0 volts base ? emitter saturation volta g e 5 / i c =150ma,i b =15ma i c = 500 ma, i b = 50 ma v be(sat) 0.6 ?? 1.2 2.0 volts frequency transition v ce = 20 v, i c = 20 ma, f= 100 mhz f t 250 ?? mhz switching times v cc = 30 v, i c = 150 ma i b1 = i b2 = 15 ma, v be ( off ) = 3 v t on t of f ?? ?? 35 300 ns output capacitance v ce = 10 v, f= 1mhz c ob ?? 8.0 pf input capacitance v ce = 0.5 v, f= 1mhz c ib ?? 25 pf notes: 1 / for ordering information, price, and availability contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @ 25oc. 5 / pulse test: pulse width= 300sec, duty cycle= 2% available part numbers: sft2222a2gw pin assignment package pin 1 pin 2 pin 3 pin 4 pin 5 pin 6 gw collector1 base1 emitter1 collector2 base2 emitter2 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0030e doc
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